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| 7MBP100RA120 IGBT-IPM R series Features * Temperature protection provided by directly detecting the junction temperature of the IGBTs * Low power loss and soft switching * High performance and high reliability IGBT with overheating protection * Higher reliability because of a big decrease in number of parts in built-in control circuit 1200V / 100A 7 in one-package Maximum ratings and characteristics Absolute maximum ratings(at Tc=25C unless otherwise specified) Item DC bus voltage DC bus voltage (surge) DC bus voltage (short operating) Collector-Emitter voltage DB Reverse voltage INV Collector current Symbol VDC VDC(surge) VSC VCES VR IC ICP -IC PC IC ICP IF PC Tj VCC *1 Vin *2 Iin VALM *3 IALM *4 Tstg Top Viso *5 Rating Min. 0 0 200 0 0 0 0 -40 -20 Max. 900 1000 800 1200 1200 100 200 100 735 50 100 50 400 150 20 Vz 1 Vcc 15 125 100 AC2.5 3.5 *6 3.5 *6 V V V V V A A A W A A A W C V V mA V mA C C kV N*m N*m Unit DC 1ms DC One transistor DB Collector power dissipation Collector current DC 1ms Forward current of Diode Collector power dissipation One transistor Junction temperature Input voltage of power supply for Pre-Driver Input signal voltage Input signal current Alarm signal voltage Alarm signal current Storage temperature Operating case temperature Isolating voltage (Case-Terminal) Screw torque Mounting (M5) Terminal (M5) Fig.1 Measurement of case temperature *1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10. *2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10. *3 Apply VALM between terminal No. 16 and 10. *4 Apply IALM to terminal No. 16. *5 50Hz/60Hz sine wave 1 minute. *6 Recommendable Value : 2.5 to 3.0 N*m Electrical characteristics of power circuit (at Tc=Tj=25C, Vcc=15V) Item INV Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of Diode Symbol ICES VCE(sat) VF ICES VCE(sat) VF Condition Min. VCE=1200V input terminal open - Ic=100A - -Ic=100A - VCE=1200V input terminal open - Ic=50A - -Ic=50A - Typ. - - - - - - Max. 1.0 2.6 3.0 1.0 2.6 3.3 Unit mA V V mA V V DB 7MBP100RA120 Electrical characteristics of control circuit(at Tc=Tj=25C, Vcc=15V) Item Power supply current of P-line side Pre-driver(one unit) Power supply current of N-line side three Pre-driver Input signal threshold voltage (on/off) Input zener voltage Over heating protection temperature level Hysteresis IGBT chips over heating protection temperature level Hysteresis Collector current protection level INV DB Over current protection delay time Under voltage protection level Hysteresis Alarm signal hold time SC protection delay time Limiting resistor for alarm *7 Switching frequency of IPM Symbol Iccp ICCN Vin(th) VZ TCOH TCH TjOH TjH IOC IOC tDOC VUV VH tALM tSC RALM IGBT-IPM Condition Min. Typ. Max. fsw=0 to 15kHz Tc=-20 to 100C *7 3 18 fsw=0 to 15kHz Tc=-20 to 100C *7 10 65 ON 1.00 1.35 1.70 OFF 1.70 2.05 2.40 Rin=20k ohm 8.0 VDC=0V, Ic=0A, Case temperature Fig.1 110 125 20 surface of IGBT chips 150 20 Tj=125C 150 Tj=125C 75 Tj=25C Fig.2 10 11.0 12.5 0.2 1.5 2 Tj=25C Fig.3 12 1425 1500 1575 Unit mA mA V V V C C C C A A s V V ms s ohm Dynamic characteristics(at Tc=Tj=125C, Vcc=15V) Item Switching time (IGBT) Switching time (FWD) Symbol Condition ton toff trr IC=100A, VDC=600V IF=100A, VDC=600V Min. 0.3 Typ. Max. 3.6 0.4 Unit s s s Thermal characteristics(Tc=25C) Item Junction to Case thermal resistance INV DB Case to fin thermal resistance with compound IGBT FWD IGBT Symbol Rth(j-c) Rth(j-c) Rth(j-c) Rth(c-f) Typ. 0.05 Max. 0.17 0.36 0.31 Unit C/W C/W C/W C/W Recommendable value Item DC bus voltage Operating power supply voltage range of Pre-driver Switching frequency of IPM Screw torque Mounting (M5) Terminal (M5) Symbol VDC VCC fSW Min. 200 13.5 1 2.5 2.5 Typ. 15 Max. 800 16.5 20 3.0 3.0 Unit V V kHz N*m N*m 7MBP100RA120 Block diagram IGBT-IPM Pre-drivers include following functions a) Amplifier for driver b) Short circuit protection c) Undervoltage lockout circuit d) Over current protection e) IGBT chip over heating protection Outline drawings, mm Mass : 920g 7MBP100RA120 Characteristics (Representative) control circuit Power supply current vs. Switching frequency Tj=100C 70 P-side 60 50 40 30 20 10 0 Vcc=17V Vcc=15V Vcc=13V Vcc=17V Vcc=15V Vcc=13V IGBT-IPM Input signal threshold voltage vs. Power supply voltage 2.5 Input signal threshold voltage : Vin(on),Vin(off) (V) Tj=25C Tj=125C Power supply current : Icc (mA) N-side 2 } Vin(off) 1.5 } Vin(on) 1 0.5 0 0 5 10 15 20 25 Switching frequency : fsw (kHz) 12 13 14 15 16 17 Power supply voltage : Vcc (V) 18 Under voltage vs. Junction temperature 14 12 Under voltage hysterisis vs. Jnction temperature 1 Under voltage hysterisis : VH (V) 0.8 Under voltage : VUVT (V) 10 8 6 4 2 0 0.6 0.4 0.2 0 20 40 60 80 100 120 140 20 40 60 80 100 120 140 Junction temperature : Tj (C) Junction temperature : Tj (C) Alarm hold time vs. Power supply voltage Over heating protection : TcOH,TjOH (C) OH hysterisis : TcH,TjH (C) 3 200 Over heating characteristics TcOH,TjOH,TcH,TjH vs. Vcc TjOH 150 TcOH 100 Alarm hold time : tALM (mSec) 2.5 Tj=125C 2 Tj=25C 1.5 1 50 TcH,TjH 0 0.5 0 12 13 14 15 16 17 18 12 13 14 15 16 17 18 Power supply voltage : Vcc (V) Power supply voltage : Vcc (V) 7MBP100RA120 Inverter IGBT-IPM Collector current vs. Collector-Emitter voltage Tj=25C 160 Vcc=17V 140 Vcc=15V Collector current vs. Collector-Emitter voltage Tj=125C 160 140 Collector Current : Ic (A) Vcc=15V Vcc=17V Collector Current : Ic (A) Vcc=13V 120 100 80 60 40 20 0 120 Vcc=13V 100 80 60 40 20 0 0 0.5 1 1.5 2 2.5 3 0 Collector-Emitter voltage : Vce (V) 0.5 1 1.5 2 2.5 Collector-Emitter voltage : Vce (V) 3 10000 Switching time : ton,toff,tf (nSec) Switching time vs. Collector current Edc=600V,Vcc=15V,Tj=25C 10000 Switching time : ton,toff,tf (nSec) Switching time vs. Collector current Edc=600V,Vcc=15V,Tj=125C toff ton toff 1000 ton 1000 tf 100 tf 100 10 0 20 40 60 80 100 120 Collector current : Ic (A) 140 160 10 0 20 40 60 80 100 120 Collector current : Ic (A) 140 160 Forward current vs. Forward voltage 160 140 Forward Current : If (A) 120 100 80 60 40 20 0 0 0.5 1 1.5 2 Forward voltage : Vf (V) 2.5 3 10 0 125C 25C Reverse recovery current : Irr(A) Reverse recovery time : trr(nSec) Reverse recovery characteristics trr,Irr vs. IF trr125C 100 trr25C Irr125C Irr25C 20 40 60 80 100 120 Forward current : IF(A) 140 160 7MBP100RA120 IGBT-IPM Transient thermal resistance 1 Thermal resistance : Rth(j-c) (C/W) FWD 1400 1200 Collector current : Ic (A) 1000 800 600 400 200 0.01 0.001 0.01 0.1 1 Pulse width :Pw (sec) 0 0 Reversed biased safe operating area Vcc=15V,Tj < 125C = IGBT 0.1 SCSOA (non-repetitive pulse) RBSOA (Repetitive pulse) 200 400 600 800 1000 1200 1400 Collector-Emitter voltage : Vce (V) Power derating for IGBT (per device) 800 Collecter Power Dissipation : Pc (W) 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 Case Temperature : Tc (C) Collecter Power Dissipation : Pc (W) 350 300 250 200 150 100 50 0 0 20 Power derating for FWD (per device) 40 60 80 100 120 140 160 Case Temperature : Tc (C) Switching Loss vs. Collector Current Edc=600V,Vcc=15V,Tj=25C 40 Switching loss : Eon,Eoff,Err (mJ/cycle) Switching loss : Eon,Eoff,Err (mJ/cycle) 35 30 25 20 15 Eoff Err 5 0 0 20 40 60 80 100 120 140 160 10 Eon 40 35 30 25 20 15 10 5 0 0 Switching Loss vs. Collector Current Edc=600V,Vcc=15V,Tj=125C Eon Eoff Err 20 40 60 80 100 120 140 160 Collector current : Ic (A) Collector current : Ic (A) 7MBP100RA120 IGBT-IPM Over current protection vs. Junction temperature Vcc=15V 400 Over current protection level : Ioc(A) 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 Junction temperature : Tj(C) 7MBP100RA120 Brake IGBT-IPM Collector current vs. Collector-Emitter voltage Tj=25C 80 70 Vcc=17V Vcc=13V 60 50 40 30 20 10 0 Vcc=15V Collector current vs. Collector-Emitter voltage Tj=125C 80 70 Vcc=17V Vcc=13V Vcc=15V Collector Current : Ic (A) Collector Current : Ic (A) 60 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 Collector-Emitter voltage : Vce (V) Collector-Emitter voltage : Vce (V) Transient thermal resistance 1 Thermal resistance : Rth(j-c) (C/W) 700 600 Reversed biased safe operating area Vcc=15V,Tj 125C IGBT Collector current : Ic (A) 500 400 300 200 100 0 SCSOA (non-repetitive pulse) 0.1 RBSOA (Repetitive pulse) 0 200 400 600 800 1000 1200 1400 0.01 0.001 0.01 0.1 1 Pulse width :Pw (sec) Collector-Emitter voltage : Vce (V) Power derating for IGBT (per device) 400 Over current protection vs. Junction temperature Vcc=15V 200 Over current protection level : Ioc(A) Collecter Power Dissipation : Pc (W) 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 150 100 50 0 0 20 Case Temperature : Tc (C) 40 60 80 100 Junction temperature : Tj(C) 120 140 |
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